to-220 -3l plastic-encapsulate transistors MJE3055 transistor (npn) features g eneral p urpose and s witching a pplications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =1ma, i e =0 70 v collector-emitter breakdown voltage v (br)ceo i c =200ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb =70v, i e =0 1 ma emitter cut-off current i ebo v eb =5v, i c =0 5 ma h fe(1) * v ce =4v, i c =4a 20 100 dc current gain h fe(2) * v ce =4v, i c =10a 5 v ce(sat) * i c =4a, i b =0.4a 1.1 v collector-emitter saturation voltage v ce(sat) * i c =10a, i b =3.3a 8 v base-emitter voltage v be * v ce =4v, i c =4a 1.8 v transition frequency f t v ce =10v, i c =0.5a 2 mhz note:*pulse test: t p 300 s, ? 0.02. symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 10 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature range -55-150 to-220 -3l 1. base 2. collectotr 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2013
0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 1400 1 10 100 1000 10000 0123456 0 1 2 3 4 5 6 0.1 0.2 0.3 0.4 0.5 0.6 1 10 1 10 100 1000 10000 10 1 10 100 1000 10000 100 1000 1 10 100 1000 10000 1 10 100 1000 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) f t ? ? i c collector current i c (ma) base-emmiter voltage v be (v) i c ? ? v be t a = 2 5 t a = 1 0 0 common emitter v ce =4v common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 100ma 90ma 80ma 70ma 60ma 50ma 20ma 30ma 40ma i b =10ma 30 common emitter v ce =10v t a =25 collector current i c (a) transition frequency f t (mhz) 100 300 t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 4v MJE3055 =3,t a =100 =3,t a =25 base-emitter saturation voltage v besat (mv) collector curremt i c (ma) i c v besat ?? =10,t a =100 =10,t a =25 3000 static characteristic i c h fe ?? =3,t a =100 =3,t a =25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10,t a =100 =10,t a =25 i c v cesat ?? 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2013
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